Focused ion beam processing

Details Focused ion beam processing Focused ion beam processing

H - Electricity

01

L

356/176, 356/192

H01L 21/423 (2006.01) H01J 37/02 (2006.01) H01J 37/305 (2006.01)

Patent

CA 1236223

ABSTRACT An apparatus is desribed which makes possible the precise sputter etching of insulating and other tar- gets, using a finely focused beam of ions produced from a liquid metal ion source. This apparatus produces and controls a submicron beam of ions to precisely sputter etch the target. A beam of electrons directed on the target neutralizes the charge created by the incident ion beam. Ultra-precise control of the etching process is achieved by monitoring the particles that are sputtered from the target surface.

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