Force sensors

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G - Physics

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G01L 1/16 (2006.01) B06B 1/06 (2006.01) G01L 1/18 (2006.01) H01L 29/84 (2006.01)

Patent

CA 1189350

ABSTRACT Force Sensor A force sensor comprising a field effect transistor structure (1, 3, 5, 7, 15) with a cantilevered beam (11a) of piezoelectric material overhanging the channel region (9), between the gate electrode (15) and the channel region (9).

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