Formation of a metalorganic compound for growing epitaxial...

Details Formation of a metalorganic compound for growing epitaxial... Formation of a metalorganic compound for growing epitaxial...

H - Electricity

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H01L 21/205 (2006.01) C07F 5/00 (2006.01) C07F 9/50 (2006.01) C30B 25/02 (2006.01)

Patent

CA 2198588

Semiconductor devices are prepared by growth of epitaxial layers on a substrate from metalorganic compounds of the formula MR3, R being an alkyl group, or its amine adduct. The metalorganic compound was prepared by reacting a Grignard reagent with the metal halide in an amine solvent.

On prépare des dispositifs à semi-conducteurs par tirage de couches épitaxiales sur un substrat à partir de composés organométalliques de la formule MR¿3?, R représentant un groupe alkyle, ou de son composé d'addition d'amine. On a préparé le composé organométallique en mettant un réactif de Grignard en réaction avec l'halogénure de métal dans un solvant d'amine.

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