Formation of etch-resistant resists through preferential...

Details Formation of etch-resistant resists through preferential... Formation of etch-resistant resists through preferential...

G - Physics

03

F

96/256

G03F 7/26 (2006.01)

Patent

CA 1251680

Abstract of the Disclosure A method is provided for creation of oxygen etch-resistant polymeric films for use in the produc- tion of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.

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