Formation of suspended beams using soi substrates, and...

Details Formation of suspended beams using soi substrates, and... Formation of suspended beams using soi substrates, and...

G - Physics

01

C

G01C 19/16 (2006.01) G01C 19/56 (2006.01)

Patent

CA 2343446

A method of fabricating a micro-mechanical sensor (101) comprising the steps for forming an insulating layer (6) onto the surface of a first wafer (4) bonding a second wafer (2) to the insulating layer (6), patterning and subsequently etching either the first (4) or second wafer (6) such that channels (18, 20) are created in either the first (2) or second (4) wafer terminating adjacent the insulating layer (6) and etching the insulating layer (6) to remove portions of the insulating layer (6) below the etched wafer such that those portions of the etched wafer below a predetermined cross section, suspended portions (22), become substantially freely suspended above the un- etched wafer. This method uses Silicon on Insulator technology. Also disclosed is a micro-mechanical gyrometer structure (101) allowing an anisotropic silicon to be used to fabricate a sensor functioning as if fabricated from isotropic silicon.

L'invention concerne un procédé qui permet de fabriquer un capteur micro-mécanique (101). Selon le procédé, on forme une couche isolante (6) à la surface d'une première plaquette (4); on colle une seconde plaquette (2) sur la couche isolante (6); on trace les motifs puis on grave la première (4) ou la seconde (6) plaquette de façon à y former des canaux (18, 20) se terminant à proximité de la couche isolante (6); et on grave la couche isolante (6) de façon à en enlever certaines parties au dessous de la plaquette gravée. De cette manière, les parties de la plaquette gravée ayant une section inférieure à une section prédéterminée, qui sont donc des parties suspendues (22), se retrouvent sensiblement librement suspendues au-dessus de la plaquette non gravée. Ce procédé fait appel à une technique silicium sur isolant (SOI). L'invention concerne également une structure de gyromètre micro-mécanique (101) qui permet d'utiliser un silicium anisotrope pour fabriquer un capteur fonctionnant comme s'il était en silicium isotrope.

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