H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/176
H01L 21/42 (2006.01) H01L 21/265 (2006.01) H01L 21/266 (2006.01) H01L 21/74 (2006.01)
Patent
CA 1162326
22 46,767 ABSTRACT OF THE DISCLOSURE Impurity regions and preferably buried impurity regions are formed of desired thicknesses and concentra- tion gradients in semiconductor bodies at a given distance from a selected surface of the body. A high energy ion beam of greater than 1.0 Mev. containing ions of an impur- ity to form a desired impurity region in the semiconductor body is formed to penetrate the body through the selected surface to a distance sufficient to form the impurity region. A beam modifier is formed of a given material and non-uniform shape to modify the ion energies on transmis- sion throughout to form the impurity region of a desired thickness and concentration gradient at a given distance from the selected surface of the semiconductor body on irradiation of the semiconductor body through the selected surface with the transmitted high energy ion beam. The semiconductor body is then positioned to be irradiated with the high energy ion beam through the beam modifier, and the semiconductor body is so irradiated until the impurity region of the desired thickness and concentration gradient is formed in the body at a desired distance from the selected surface. Preferably, there is a predeter- mined relative movement between the beam modifier and semiconductor body during irradiation to modulate the ion beam as desired to form the impurity region. The semicon- ductor body is also preferably annealed after irradiation to remove detrimental electrical characteristics caused by the irradiation from the semiconductor body,
379841
Oldham And Company
Westinghouse Electric Corporation
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