Forming low-resistance contact to silicon

Details Forming low-resistance contact to silicon Forming low-resistance contact to silicon

C - Chemistry, Metallurgy

23

C

22/190, 117/61,

C23C 14/34 (2006.01) H01L 21/285 (2006.01) H01L 21/70 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01) H01L 29/45 (2006.01)

Patent

CA 1200155

Abstract Annealing a titanium-rich carbide film deposited on silicon produces, in a single processing step, both a stable titanium silicide contact and a titanium carbide diffusion barrier between the silicide and a subsequently formed overlying layer of aluminum. Reliable low- resistance contacts to VLSI devices are thereby provided in a cost-effective fabrication sequence. Other metallization systems, comprising a silicide and a diffusion barrier to aluminum formed in a single processing step, are also described.

441088

Affiliated with

Also associated with

Rating

Forming low-resistance contact to silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming low-resistance contact to silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming low-resistance contact to silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1324207