H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/176
H01L 21/423 (2006.01) H01L 21/263 (2006.01) H01L 29/32 (2006.01)
Patent
CA 1135876
46, 245 ABSTRACT OF THE DISCLOSURE Irradiated regions are formed in materials such as semiconductor bodies by nuclear radiation where the irradiated regions are of a desired thickness, dosage and dosage gradient, a desired distance from a selected sur- face of the material. A nuclear radiation beam from a given radiation source radiating particles with molecular weight of at least one (1) is provided that can penetrate the material through a selected surface to a depth greater than the maximum depth of the irradiated region from the selected surface. A beam modifier is formed of a given material and non-uniform shape to modify the energy of the radiation beam on transmission therethrough to form a transmitted radiation beam capable of forming an irradi- ated region of a desired thickness and dosage gradient in the material a given distance from the selected surface on irradiation of the material through the selected surface with the transmitted radiation beam. The material in which the desired irradiated region is to be formed is positioned with the selected surface thereof to be exposed to the radiation beam from the radiation source on trans- mission through the beam modifier. The material is there- 41 46,245 after irradiated through the beam modifier and through the selected surface with the radiation beam, preferably while the beam modifier and material are moved relative to each other through a predetermined motion, to form in the material an irradiated region of desired thickness, dosage and dosage gradient, a desired distance from the selected surface. The irradiated region thus formed in semiconduc- tor bodies are particularly of value in changing the electrical characteristics without substantial change of other electrical characteristics.
342729
Bartko John
Schlegel Earl S.
Mcconnell And Fox
Westinghouse Electric Corporation
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