Forming polycide structure comprised of polysilicon,...

Details Forming polycide structure comprised of polysilicon,... Forming polycide structure comprised of polysilicon,...

H - Electricity

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H01L 23/58 (2006.01) H01L 21/28 (2006.01) H01L 21/321 (2006.01) H01L 23/532 (2006.01) H01L 29/49 (2006.01)

Patent

CA 1278273

ABSTRACT A novel method is described for use in IC technology for reducing the resistance of polysilicon interconnect lines. This is accomplished by placing a refractory metal silicide on the polysilicon interconnect material. In the preferred embodiment of this method, a layer of silicon is interposed between the poly- silicon interconnect material and and a titanium silicide to eliminate penetration of the refractory metal silicide into the underlying polysilicon layer during the oxidation process of said structure both in dry and wet oxygen environments.

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