Forming silicon integrated circuit region by the...

Details Forming silicon integrated circuit region by the... Forming silicon integrated circuit region by the...

H - Electricity

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356/176

H01L 21/24 (2006.01) H01L 21/265 (2006.01) H01L 29/167 (2006.01)

Patent

CA 1075831

FORMING SILICON INTEGRATED CIRCUIT REGION BY THE IMPLANTATION OF ARSENIC AND GERMANIUM Abstract A method for forming N conductivity-type regions in a silicon substrate comprising ion implanting arsenic to form a region in said substrate having an arsenic atom -2 concentration of at least 1 x 10 As atoms/total atoms in substrate, and ion implanting germanium into said sub- strate region. Even though the atomic radius of arsenic is very close to that of silicon -- the arsenic radius is only 0.5.delta. smaller -- when high arsenic atom concentra- -2 tions of at least 1 x 10 atoms/total atoms in the sub- strate are introduced in the substrate, and such high concentrations are only possible when arsenic is ion implanted then atomic misfit dislocations will occur. The implanted germanium atoms compensate for the lattice strain in the silicon to minimize dislocations.

287340

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