Forms of transition metal dichalcogenides

C - Chemistry – Metallurgy – 01 – G

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C01G 35/00 (2006.01) C01B 17/20 (2006.01) C01G 39/06 (2006.01) C01G 41/00 (2006.01)

Patent

CA 1282574

NEW FORMS OF TRANSITION METAL DICHALCOGENIDES ABSTRACT Novel single layer materials of the form MX2, where MX2 is a layer-type dichalcogenide such as MoS2, TaS2, WS2, or the like, exfoliated by intercalation of an alkali metal, and immersion in water, are disclosed. MoS2 has been exfoliated into monolayers by intercalation with lithium followed by reaction with water. X-ray diffraction analysis demon- strates that the exfoliated MoS2 in suspension is in the form of one-molecule-thick sheets. X-ray patterns from dried and re-stacked films of exfoliated MoS2 indicate that the layers are randomly stacked. By adsorbing monolayers or precipitating clusters of vari- ous species such as compounds of Co, Ni, Pb, Cd, Al, Ce, In and Zn, on MoS2 while the sulfide is suspended as single layers and then recrystallizing, a new group of inclusion compounds can be formed. In the re-crystal- lized or re-stacked materials, the inter-layer spacing can be expanded or contracted compared to MoS2.

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