C - Chemistry – Metallurgy – 01 – G
Patent
C - Chemistry, Metallurgy
01
G
23/128
C01G 35/00 (2006.01) C01B 17/20 (2006.01) C01G 39/06 (2006.01) C01G 41/00 (2006.01)
Patent
CA 1282574
NEW FORMS OF TRANSITION METAL DICHALCOGENIDES ABSTRACT Novel single layer materials of the form MX2, where MX2 is a layer-type dichalcogenide such as MoS2, TaS2, WS2, or the like, exfoliated by intercalation of an alkali metal, and immersion in water, are disclosed. MoS2 has been exfoliated into monolayers by intercalation with lithium followed by reaction with water. X-ray diffraction analysis demon- strates that the exfoliated MoS2 in suspension is in the form of one-molecule-thick sheets. X-ray patterns from dried and re-stacked films of exfoliated MoS2 indicate that the layers are randomly stacked. By adsorbing monolayers or precipitating clusters of vari- ous species such as compounds of Co, Ni, Pb, Cd, Al, Ce, In and Zn, on MoS2 while the sulfide is suspended as single layers and then recrystallizing, a new group of inclusion compounds can be formed. In the re-crystal- lized or re-stacked materials, the inter-layer spacing can be expanded or contracted compared to MoS2.
546338
Frindt Robert F.
Gee Michael A.
Joensen Per
Morrison S. Roy
Oyen Wiggs Green & Mutala Llp
Simon Fraser University
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