Four transistor static ram cell

G - Physics – 11 – C

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

356/23, 352/81

G11C 11/40 (2006.01) G11C 11/403 (2006.01) G11C 11/412 (2006.01) G11C 11/418 (2006.01) G11C 11/419 (2006.01)

Patent

CA 2012668

A static RAM cell includes a first pair of transistors, which act as pass or switching transistors during a read or write operation, and as leads during a refresh operation, and a second pair of current sink transistors connected as a cross-coupled flip-flop and connected to the first pair of transistors. The operation of the memory cell transistors during read and write and refresh operations is controlled by different levels of a control signal applied to their respective control terminals, whereby refreshing does not affect reading or writing of data from or into the SRAM cell.

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Four transistor static ram cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Four transistor static ram cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Four transistor static ram cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1441893

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.