Freestanding iii-nitride single-crystal substrate and method...

Details Freestanding iii-nitride single-crystal substrate and method... Freestanding iii-nitride single-crystal substrate and method...

H - Electricity

01

L

H01L 29/20 (2006.01) H01L 21/02 (2006.01)

Patent

CA 2663779

Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5 x 10 5 cm-2 and that are fracture resistant, and a method of manufacturing semiconductor devices utilizing such freestanding III-nitride single-crystal substrates are made available. The freestanding III-nitride single-crystal substrate includes one or more high-dislocation-density regions (20h), and a plurality of low-dislocation-density regions (20k) in which the dislocation density is lower than that of the high-dislocation-density regions (20h), wherein the average dislocation density is not greater than 5 x 10 5 cm-2. Herein, the ratio of the dislocation density of the high-dislocation-density region(s) (20h) to the average dislocation density is sufficiently large to check the propagation of cracks in the substrate. And the semiconductor device manufacturing method utilizes the freestanding III-nitride single crystal substrate (20p).

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