Front contact with high work-function tco for use in...

H - Electricity – 01 – L

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H01L 31/0224 (2006.01)

Patent

CA 2659855

This invention relates to a front contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front contact of the photovoltaic device includes a low work-function transparent conductive oxide (TCO) of a material such as tin oxide, zinc oxide, or the like, and a thin high work-function TCO of a material such as oxygen-rich ITO (indium tin oxide) or the like. The high-work function TCO is located between the low work-function TCO and the uppermost semiconductor layer of the photovoltaic device so as to provide for substantial work-function matching between the low work-function TCO and the high work-function uppermost semiconductor layer of the device in order to reduce a potential barrier for holes extracted from the device by the front contact.

L'invention concerne un contact avant destiné à être utilisé dans un dispositif électronique, tel qu'un dispositif photovoltaïque. Dans certains modes de réalisation, le contact avant du dispositif photovoltaïque comprend un oxyde conducteur transparent (TCO) à fonction de travail faible, fabriqué dans un matériau tel que l'oxyde d'étain, l'oxyde de zinc ou analogue, et un oxyde conducteur transparent (TCO) à fonction de travail élevée, fabriqué dans un matériau tel que l'oxyde d'étain indium riche en oxygène ou analogue. Le TCO à fonction de travail élevée est situé entre le TCO à fonction de travail faible et la couche semi-conductrice supérieure du dispositif photovoltaïque, de manière à fournir une fonction de travail substantielle correspondante entre le TCO à fonction de travail faible et la couche semi-conductrice supérieure à fonction de travail élevée du dispositif, de manière à réduire une barrière de potentiel pour des trous extraits du dispositif par le contact avant.

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