Front electrode with thin metal film layer and high...

H - Electricity – 01 – L

Patent

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H01L 31/0224 (2006.01)

Patent

CA 2668103

This invention relates to a front electrode or contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of the photovoltaic device includes a highly conductive metal film and a thin high work-function buffer layer. The high-work function buffer layer is located between the metal film and the uppermost semiconductor layer so as to provide for substantial work-function matching between the metal film and the high work-function uppermost semiconductor layer so as to reduce a potential barrier for holes extracted from the device by the front electrode/contact. Optionally, a layer such as a transparent conductive oxide (TCO) or a dielectric may be provided between a front glass substrate and the metal film.

L'invention concerne une électrode ou un contact avant utilisé dans un dispositif électronique comme un dispositif photovoltaïque. Dans certains modes de réalisation, l'électrode avant du dispositif photovoltaïque comprend une pellicule métallique fortement conductrice et une mince couche tampon hautement fonctionnelle. La couche tampon hautement fonctionnelle est située entre la pellicule métallique et la couche semi-conductrice supérieure afin d'obtenir une correspondance sensiblement fonctionnelle entre la pellicule métallique et la couche semi-conductrice supérieure hautement fonctionnelle afin de réduire une barrière de potentiel pour les trous extraits du dispositif par l'électrode/le contact avant. Le cas échéant, une couche comme un oxyde conducteur transparent (TCO) ou un diélectrique peut être insérée entre un substrat de verre avant et la pellicule métallique.

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