H - Electricity – 01 – L
Patent
H - Electricity
01
L
148/3.6
H01L 21/36 (2006.01) H01L 21/365 (2006.01) H01L 31/0296 (2006.01) H01L 31/0392 (2006.01) H01L 31/068 (2006.01) H01L 31/18 (2006.01)
Patent
CA 1320106
ABSTRACT OF THE DISCLOSURE An improved functional ZnSe1-xTex:H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe1-xTex:H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way. These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate. These films are suited for the preparation of a high functional device such as a photovoltatic element.
573473
Arao Kozo
Fujioka Yasushi
Ishihara Shunichi
Kanai Masahiro
Murakami Tsutomu
Canon Kabushiki Kaisha
Ridout & Maybee Llp
LandOfFree
Functional znse __te :h deposited film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Functional znse __te :h deposited film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Functional znse __te :h deposited film will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1208017