Fused quartz diffusion tubes for semiconductor manufacture

Details Fused quartz diffusion tubes for semiconductor manufacture Fused quartz diffusion tubes for semiconductor manufacture

H - Electricity

01

L

H01L 21/22 (2006.01) C30B 25/08 (2006.01) C30B 31/10 (2006.01) H01L 21/223 (2006.01)

Patent

CA 2110009

ABSTRACT OF THE DISCLOSURE Fused quartz diffusion tubes used in the manufacture of silicon useful for semiconductors has improved resistance to sodium diffusion by means of a metal silicate coating of a metal selected from the group consisting essentially of scandium, yttrium, beryllium, rare earth metal and mixture thereof on its surface. Although the metal silicate coating can be present on the interior or exterior surface of the tube or on both the interior and exterior surfaces, in most applications it will be present only on the exterior surface to prevent potential contamination of the silicon with a metal of the coating.

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