C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 31/20 (2006.01) H01L 21/205 (2006.01) H01L 21/223 (2006.01) H01L 21/263 (2006.01) H01L 21/331 (2006.01) H01L 27/102 (2006.01) H01L 29/207 (2006.01)
Patent
CA 2059407
High carrier concentration, as well as abrupt change in such concentration in GaAs-based devices, is the consequence of selection of tin dopant-containing precursor compounds as used during layer growth. Alkyl tin compounds, as used during MetalOrganic Molecular Beam Epitaxy, are of particular value in the growth of pnp heterojunction bipolar transistors, likely in conjuncdon with other devices in large scale integrated circuits.
Une forte concentration de porteurs ainsi qu'un changement brusque de la concentration dans les dispositifs à base de GaAs résultent de la sélection de composés précurseurs de l'étain contenant un dopant durant la croissance de la couche. Les composés allyle/étain utilisés dans le procédé d'épitaxie organométallique par faisceaux moléculaires sont d'intérêt particulier dans la croissance des transistors PNP bipolaires à hétérojonction, vraisemblablement en conjonction avec d'autres appareils dans les circuits L.S.I.
Abernathy Cammy R.
Ren Fan
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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