H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/207 (2006.01) C30B 11/00 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 29/772 (2006.01)
Patent
CA 2275088
A GaAs single crystal substrate and an epitaxial wafer using the same which suppress generation of slips when the epitaxial layer is grown and enable improvement of withstanding characteristic of devices can be obtained. A GaAs single crystal substrate has mean dislocation density in plane of at most 2 x 10 4 cm-2, carbon concentration of 2.5 to 20.0 x 10 15 cm- 3, boron concentration of 2.0 to 20.0 X 10 16 cm-3, impurity concentration other than carbon and boron of at most 1 X 10 17 cm-3, EL2 concentration of 5.0 to 10.0 X 10 15cm-3, resistivity of 1.0 to 5.0 X 10 8 .OMEGA. cm and mean residual strain measured by photoelastic analysis of at most 1.0 X 10-5.
Hagi Yoshiaki
Nakai Ryusuke
G. Ronald Bell & Associates
Sumitomo Electric Industries Ltd.
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