H - Electricity – 03 – G
Patent
H - Electricity
03
G
330/39, 356/68
H03G 3/18 (2006.01) H01L 27/02 (2006.01) H01L 27/082 (2006.01) H03F 3/14 (2006.01) H03F 3/45 (2006.01) H03G 1/00 (2006.01)
Patent
CA 1160360
RCA 75,015 Abstract of the Disclosure A gain-controlled amplifier is provided which employs a controllable alternating-current resistance device. The device is constructed in a similar manner as a vertical PNP transistor, having an emitter region of high conductivity P+ material, a P type collector region, and an intervening region of high resistivity (intrinsic) N type base material. An N+ base contact region is separated from the P+ emitter region by an expanse of the intrinsic material which establishes a separation which is greater than the diffusion length of carriers injected into the intrinsic region. The base emitter junction of the device which is formed by the N+ base contact region, the intrinsic region, and the P+ emitter region thus has the characteristics of a PIN diode, with a high injected carrier lifetime. At higher signal frequencies, such as the frequencies of television I.F. signals, the base-emitter PIN junction ceases to act as a normal transistor rectifying junction, and becomes an A.C. resistance which varies as a function of the number of injected carriers. Carriers are injected into the intrinsic region from the P+ emitter region, and vary as a function of the magnitude of the emitter-to-collector control current. Only a very small base current component of the applied control current flows in the base-emitter junction, and therefore only this small base current component is applied to the amplifier which is coupled to the base of the device. With the high carrier lifetime and operation at higher signal frequencies, the A.C. resistance of the base-emitter junction is virtually completely a function of the magnitude of the control current.
375491
Morneau Roland L.
Rca Corporation
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