Gain-coupled distributed-feedback semiconductor laser device

Details Gain-coupled distributed-feedback semiconductor laser device Gain-coupled distributed-feedback semiconductor laser device

H - Electricity

01

S

H01S 5/00 (2006.01) H01S 5/06 (2006.01) H01S 5/12 (2006.01)

Patent

CA 2321607

A gain-coupled DFB semiconductor laser device has a resonator including a MQW active layer (13) and a diffraction grating (23) which feeds-back the emission from the resonator to allow the resonator to lase. The gain-coupled coefficient ~g and the length Lg of the diffraction grating (23) satisfy the following relationship: 0.5 ~ ¦k g¦X L g ~ 1.1. The yield rate of the DFB laser device with respect to the single-longitudinal mode lasing characteristic is improved.

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