Gain photocurrent device

Details Gain photocurrent device Gain photocurrent device

H - Electricity

01

L

345/13, 96/187

H01L 31/08 (2006.01) G02F 1/135 (2006.01) G02F 1/17 (2006.01) G03G 5/14 (2006.01) H01L 31/113 (2006.01)

Patent

CA 1043007

ABSTRACT OF THE DISCLOSURE High quantum yields are provided by sandwiching an insulating layer in contact with a photoconductor between two electrodes. The sandwiched structure in conjunction with an applied electrical potential and excitation light provides an electrical switching device. Optionally, an imaging layer can be included between the photoconductive layer and one of the electrodes, and can be imaged with increased sensitivity. The thickness of the photoconductive layer to the insulating layer is in the ratio of at least about 10 to 1.

230070

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