Gain photocurrent enhancement method

Details Gain photocurrent enhancement method Gain photocurrent enhancement method

H - Electricity

01

J

345/14

H01J 31/49 (2006.01) H01J 29/45 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1049125

ABSTRACT OF THE DISCLOSURE High quantum yields of gain photocurrent provided by sandwiching an insulating layer in contact with a photocon- ductor between two electrodes, the thickness ratio of the photo- conductive layer to the insulating layer being at least 10 to 1, applying an electrical potential thereacross, and directing excitation light upon the photo- conductor are increased by simultaneously impinging the photoconductor with infrared radiation during exposure to the excitation light where the photoconductor comprises selenium or a selenium alloy. In cyclical operation of gain photocurrent devices having a photoconductive layer comprising selenium or a selenium alloy, fatigue effects are overcome by irradiation with infrared radiation.

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