Gallium arsenide crystal grown on silicon substrate and...

Details Gallium arsenide crystal grown on silicon substrate and... Gallium arsenide crystal grown on silicon substrate and...

C - Chemistry, Metallurgy

30

B

148/3.8

C30B 25/02 (2006.01) C30B 29/42 (2006.01) H01L 21/205 (2006.01) H01L 29/267 (2006.01)

Patent

CA 1265980

Abstract of the Disclosure A GaAs growth crystal comprises a Si substrate, an intermediate layer formed on the substrate and a GaAs layer grown on the intermediate layer. The intermediate layer includes constituent GaP/GaAsP and GaAsP/GaAs superlattice layers and additionally AIP and AlGaP thin films.

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