C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/16 (2006.01) C23C 14/08 (2006.01) H01L 21/28 (2006.01) H01L 21/316 (2006.01) H01L 21/441 (2006.01) H01L 23/532 (2006.01)
Patent
CA 2136581
Disclosed is a method of fabricating a stoichiometric gallium oxide (Ga2O3) thin film with dielectric properties on at least a portion of a semiconducting, insulating or metallic substrate. The method comprises electron-beam evaporation of single crystal, high purity Gd3 GasO12 complex compound combining relatively ionic oxide, such as Gd2O3, with the more covalent oxide Ga2O3 such as to deposit a uniform, homogeneous, dense Ga2O3 thin film with dielectric properties on a variety of said substrates, the semiconducting substrates including III-V and II-VI compound semiconductors.
L'invention porte sur une méthode pour fabriquer une mince pellicule d'oxyde de gallium (Ga2O3) en proportions stoechiométriques, avec des propriétés diélectriques sur au moins une portion d'un substrat semi-conducteur, isolant ou métallique. La méthode consiste à faire évaporer par un faisceau électronique un complexe Gd3GasO12, monocristallisé, haute pureté, combinant un oxyde relativement ionique, comme Gd2O3, avec l'oxyde Ga2O plutôt covalent, de façon à déposer une mince pellicule, uniforme, homogène et dense de Ga2O3, possédant des propriétés diélectriques, sur divers substrats de ce type; les substrats semi-conducteurs incluent des composés semi-conducteurs III-V et II-VI.
Hunt Neil Edmund James
Passlack Matthias
Schubert Erdmann F.
Zydzik George J.
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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