Gan based led formed on a sic substrate

Details Gan based led formed on a sic substrate Gan based led formed on a sic substrate

H - Electricity

01

L

H01L 33/00 (2006.01)

Patent

CA 2446656

A light emitting diode is disclosed. The diode includes a silicon carbide substrate (21) having a first conductivity type, a first gallium nitride layer (25) above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer (27) formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second GaN layer (30) on the superlattice having the same conductivity type as the first GaN layer, a multiple quantum well (31) on the second GaN layer, a third GaN layer on the multiple quantum well, a contact structure on the third GaN layer (32) having the opposite conductivity type from the substrate and the first GaN layer, an ohmic contact to the SiC substrate, and an ohmic contact to the contact structure.

L'invention concerne une diode électroluminescente qui comprend un substrat de carbure de silicium (21) présentant un premier type de conductivité, une première couche de nitrure de gallium (25) au-dessus du substrat SiC présentant le même type de conductivité que ledit substrat, un super-réseau sur la couche de GaN (27) constitué d'une pluralité d'ensembles récurrents de couches alternées sélectionnées parmi GaN, InGaN et AlInGaN, une deuxième couche de GaN (30) sur le super-réseau présentant le même type de conductivité que la première couche de GaN, un multipuits quantique (31) sur la deuxième couche de GaN, une troisième couche de GaN sur le multipuits quantique, une structure de contact sur la troisième couche de GaN (32) présentant un type de conductivité opposé à celui du substrat et de la première couche de GaN, un contact ohmique au substrat SiC et un contact ohmique à la structure de contact.

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