Gan epitaxial substrate, semiconductor device and methods...

Details Gan epitaxial substrate, semiconductor device and methods... Gan epitaxial substrate, semiconductor device and methods...

C - Chemistry, Metallurgy

30

B

C30B 29/38 (2006.01) C30B 25/18 (2006.01) H01L 21/205 (2006.01) H01S 5/323 (2006.01) H01S 5/343 (2006.01)

Patent

CA 2672177

Provided are a GaN epitaxial substrate having an improved yield, a semiconductor device using such GaN epitaxial substrate, and methods for manufacturing the GaN epitaxial substrate and the semiconductor device. The GaN epitaxial substrate manufacturing method has a first GaN layer forming step of epitaxially growing a first GaN layer on a base substrate; a recessed section forming step of forming a recessed section on an upper surface of the base substrate after the first GaN layer forming step; and a second GaN layer forming step of epitaxially growing a second GaN layer on the first GaN layer after the recessed section forming step. Thus, generation of cracks is suppressed and the yield is improved.

L'invention porte sur un substrat épitaxial de GaN à rendement amélioré, sur un dispositif à semi-conducteur utilisant un tel substrat épitaxial de GaN et sur des procédés de fabrication du substrat épitaxial de GaN et du dispositif à semi-conducteur. Le procédé de fabrication du substrat épitaxial de GaN consiste à former une couche de GaN ; réaliser une croissance épitaxiale d'une première couche de GaN sur un substrat de base ; former une section en creux sur une surface supérieure du substrat de base après la formation de la couche GaN ; réaliser une croissance épitaxiale d'une seconde couche de GaN sur la première couche de GaN après la formation de section en creux. Le procédé permet de diminuer la création de fissures et d'améliorer le rendement.

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