Gang bonding interconnect tape for semiconductive devices...

Details Gang bonding interconnect tape for semiconductive devices... Gang bonding interconnect tape for semiconductive devices...

H - Electricity

05

K

356/151

H05K 1/11 (2006.01) H01L 21/48 (2006.01) H01L 23/495 (2006.01) H05K 1/00 (2006.01) H05K 3/00 (2006.01)

Patent

CA 1052912

Application for Patent of CARMEN D. BURNS for GANG BONDING INTERCONNECT TAPE FOR SEMICONDUCTIVE DEVICES AND METHOD OF MAKING SAME ABSTRACT OF THE DISCLOSURE A gang bonding interconnect tape, for use in an automatic bonding machine for gang bonding of semiconductive devices, is fabricated by forming a row of first locator holes along the marginal side edge of an elongated master tape. Next the master tape is coated with a photoresist coating and exposed, through a mask, to patterns of optical radiation to which the photo- resist is sensitive. The mask is indexed to the locator holes in the master tape. The mask includes patterns corresponding to parallel rows of interconnect lead patterns and to parallel rows of sprocket holes for locating each of the individual interconnect lead patterns in the gang bonding machine. The exposed master tape is then developed, the photoresist material removed to expose the tape material in accordance with the developed images. The exposed tape is then etched to form the parallel rows of metallic interconnect lead patterns and their respective parallel rows of sprocket holes. The master tape is then slit into a plurality of tapes. Each resultant tape has a row of virgin sprocket holes and a row of interconnect lead patterns. In this process, the sprocket holes for each resultant tape arc indexed to the respective interconnect lead patterns via the mask, whereas the mask is indexed to the tape via the first locator holes formed along the marginal side edges of the master tape. The resultant tapes arc utilized in a automatic gang bonding machine in the conventional manner.

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