G - Physics – 01 – N
Patent
G - Physics
01
N
324/23
G01N 27/70 (2006.01) G01N 27/12 (2006.01)
Patent
CA 1118494
Abstract of the Disclosure A gas detecting element having a high gas selectivity which comprises an N-type metal oxide semiconductor, 0.005 to 8 % by weight based on the metal oxide, of at least one noble metal catalyst selected from the group consisting of platinum (Pt), palladium (Pd) and rhodium (Rh) and phosphorus 1.5 to 30 times as much as that of the noble metal or 0.05 to 30 times as much as that of palladium where palladium alone is used as the noble metal catalyst.
326589
Hiraki Hideaki
Kaneda Tadao
Katsura Masaki
Shiratori Masayuki
Takahashi Takashi
Ridout & Maybee Llp
Tokyo Shibaura Denki Kabushiki Kaisha
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