Gas etching method of manufacturing of semiconductor device

Details Gas etching method of manufacturing of semiconductor device Gas etching method of manufacturing of semiconductor device

H - Electricity

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L

356/177

H01L 21/302 (2006.01) H01L 21/311 (2006.01)

Patent

CA 1169587

PHN 9790 8 ABSTRACT: A method of manufacturing a semiconductor device in which layers of silicon nitride and silicon oxide are etched by bringing the layers into contact with constitu- ents of a plasma which is formed in a gas mixture which contains a fluoride compound and an oxygen compound. By addition of from 1 to 15% by volume of a gaseous compound which contains a halogen other than fluoride to the gas mixture, silicon nitride layers can be etched away at least five times faster than silicon oxide layers. The method is thus suitable in practice, for example, for manufacturing a silicon nitride mask for the formation of a field oxide in LOCOS processes.

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