Gas sensor

G - Physics – 01 – N

Patent

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340/143, 73/69

G01N 27/14 (2006.01) G01N 27/12 (2006.01)

Patent

CA 1178824

L. J. Rigby lX GAS SENSOR ABSTRACT OF THE DISCLOSURE A semiconductor gas sensor comprises an insulating substrate on which a resistive heater track coupled to a pair of electrodes is deposited. A film of a semiconductive metal oxide. typically a doped oxide, is ion-plated onto the assembly so as to contact the resistive track and a further electrode. Exposure of the device to a particular gas, e.g. hydrogen sulphide, reduces the resistivity of the semiconductive film, this change being detected via an amplifier circuit. In an alternative version of the sensor, the heater is disposed under a dielectric layer, the semiconductive film being ion-plated onto the dielectric layer and electrodes therein.

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