Gas sensors with improved resistance to humidity interference

Details Gas sensors with improved resistance to humidity interference Gas sensors with improved resistance to humidity interference

G - Physics

01

N

G01N 27/12 (2006.01) G01N 33/00 (2006.01)

Patent

CA 2406113

Semiconductor gas-sensitive materials of the formula Cr2-xTixO3 where 0.05 > x >= 0.0001, and gas sensors formed therefrom.

L'invention concerne des matériaux semiconducteurs sensibles au gaz, représentés par la formule Cr¿2-x?Ti¿x?O¿3?, dans laquelle 0,05 > x >= 0,0001, ainsi que des détecteurs de gaz produits à partir de ces matériaux.

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