Gas shower unit for semiconductor manufacturing apparatus...

H - Electricity – 01 – L

Patent

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Details

H01L 21/00 (2006.01) C23C 16/44 (2006.01) C23C 16/455 (2006.01) H01J 37/32 (2006.01)

Patent

CA 2323255

A gas shower unit has a function of preliminary heating reactant gas to be passed therethrough, and is thus capable of causing uniform reaction within a semiconductor manufacturing apparatus and preventing through hole clogging and particle generation. The gas shower unit has a base material of 5 mm or less in thickness and includes a sintered aluminum nitride base material having a plurality of through holes and a heater circuit pattern or a plasma upper electrode as a conductive layer formed in the sintered aluminum nitride base material.

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