Gaseous etching process

Details Gaseous etching process Gaseous etching process

C - Chemistry, Metallurgy

30

B

148/3.2

C30B 29/40 (2006.01) H01L 21/306 (2006.01) H01L 27/06 (2006.01) H01L 27/092 (2006.01)

Patent

CA 1274154

PROCESS FOR MAKING SEMICONDUCTOR DEVICES WHICH INVOLVES GASEOUS ETCHING Abstract A process is described for preparing III-V compound semiconductor devices (e.g., gallium arsenide devices) in which gaseous bromine or chlorine is used as an etch. This etch procedure provides highly uniform etching. High selectivity for etching gallium arsenide in the presence of gallium aluminum arsenide may be obtained by the addition of oxidant gas such as water vapor.

506811

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