C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/3.2
C30B 33/12 (2006.01) H01L 21/306 (2006.01) H01L 21/311 (2006.01)
Patent
CA 1275376
ABSTRACT A process of removing at least a portion of a film from a substrate, such as a wafer of silicon or other similar materials, the film on the substrate typically being an oxide film, maintaining the atmosphere embracing the substrate at near room temperature and at near normal atmospheric pressure, blowing dry inert diluent gas over the substrate, pretreating the film by flowing vapor over the substrate and film flowing an anhydrous reactive gas from a source separate from the source of vapor, over the substrate and film and particularly flowing anhydrous hydrogen halide gas, namely anhydrous hydrogen fluoride gas over the substrate and film to cause the removal of portions of the film, continuing the flow of the reactive gas over the substrate film for typically 5 to 30 seconds, until a controlled amount of film has been removed, terminating the flow of reactive gas and continuing the flow of dry inert diluent gas to stop the removal of film. In the case of non-hygroscopic film on the substrate, the flow of vapor continues during the flow owe the reactive gas and is terminated shortly after the termination of the flow of reactive gas. In the case of hygroscopic film, the flow of vapor is discontinued prior to the start of flow of the reactive gas. The vapor is generated by any of a number of means and is carried by small quantities of dry inert gas. The controlled flows of the inert gas vapor and reactive gas are mixed prior to flowing the gases over the substrate. In carrying out the process, a process chamber is needed to confine the substrate and have a vent, though restricted, continuously open. A source of anhydrous reactive gas comprising hydrogen halide, namely hydrogen fluoride, is connected to a gas mixing means, as is a source of dry inert gas and a source of water vapor which is carried by small quantities of dry inert gas, which are directed into the chamber from the mixing means. Optionally, the substrate may be carried in the chamber as to be rotated during flow of gas thereover.
516835
Biggerstaff Rex Lee
Blackwood Robert Stephan
Cleavelin Cloves Rinn
Clements Luther Davis
Borden Ladner Gervais Llp
Fsi Corporation
Texas Instruments Incorporated
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