Gasless ion plating process and apparatus

Details Gasless ion plating process and apparatus Gasless ion plating process and apparatus

C - Chemistry, Metallurgy

23

C

204/167, 204/96.

C23C 14/32 (2006.01)

Patent

CA 1161786

Abstract of the Disclosure There is disclosed a new and improved gasless ion plating apparatus and process which eliminates the prior need for electrically isolating the substrate from the evacuated chamber in which the plating process is performed. In accordance with a disclosed em- bodiment, one or more substrates to be plated are placed within the chamber. Also within the chamber there is disposed a plating source which includes plating material. The chamber is evacuated and the plating material is heated to vaporize the plating material. Radio frequency energy is applied to the plating source to form a plasma of positively charged plating ions from the vaporized plating material. A positive direct current bias is developed on the plating source relative to the substrates by, for example, applying a direct current positive voltage to the plating source to create an electrical field between the source and substrates for accelerating the plating ions towards the substrates for plating the same.

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