Gate charge neutralization for insulated gate field- effect...

Details Gate charge neutralization for insulated gate field- effect... Gate charge neutralization for insulated gate field- effect...

H - Electricity

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H01L 29/78 (2006.01) H01L 21/268 (2006.01) H01L 21/3105 (2006.01) H01L 21/336 (2006.01)

Patent

CA 1111572

GAS CHARGE NEUTRALIZATION FOR INSULATED GATE FIELD-EFFECT TRANSISTORS Abstract of the Disclosure Positive charges that appear in the gate silicon oxide insula- tion of a silicon insulated gate field-effect transistor device may be controlled through neutralization by injecting electrons in to the gate oxide from the substrate after the device is complete and metallized by irradiating the back of the substrate with light in the presence of a voltage bias.

308848

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