H - Electricity
03
K
328/139
H03K 19/094 (2006.01) H03K 19/017 (2006.01) H03K 19/0952 (2006.01)
Patent
CA 1258103
ABSTRACT A gate circuit has a bias diode (9), which is connected across the gate and the source of a current source FET (4) of a buffer part (3, 4), and a capacitor (8), which is connected across the gate of said FET (4) and an input terminal (VI); and thereby a high load drivability with a low power consumption rate is realized.
522704
Aoki Hiromitsu
Aoki Ikuko
Otsuki Tatsuo
Shimano Akio
Borden Ladner Gervais Llp
Matsushita Electric Industrial Co. Ltd.
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