H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 27/07 (2006.01) H01L 29/73 (2006.01) H01L 29/735 (2006.01) H01L 29/739 (2006.01) H03G 1/00 (2006.01)
Patent
CA 2135981
A gate controlled lateral bipolar junction transistor (GCLBJT) device for an integrated circuit and a method of fabrication thereof are provided. The GCLBJT resembles a merged field effect transistor and lateral bipolar transistor, i.e. a lateral bipolar transistor having base, emitter and collector terminals and a fourth terminal for controlling a gate electrode overlying an active base region. The device is operable as an electronically configurable lateral transistor. Advantageously a heavily doped buried layer provides a base electrode having a base contact which surrounds and encloses the collector. The surface region between emitter and collector is characterized by lightly doped regions adjacent and contiguous with the heavily doped emitter and collector, which effectively reduce the base width of the bipolar transistor and improve operation for analog applications. threshold adjust implant in the surface of the base region under the gate electrode allows for control of threshold voltage of the surface MOS channel. Performance parameters of the bipolar transistor may be adjusted via a signal to the fourth i.e., gate, terminal, to control inversion under the gate, thereby controlling the path of carriers between the emitter and collector. Transistor performance characteristics such as common-emitter current gain, unity- gain frequency, and the low frequency noise properties are all variable quantities which can be specified electronically, i.e. they are programmable by a signal applied to the gate. Concurrent use of field effect and bipolar injection phenomenon within the same device yield the salient device characteristics. Applications include mixer and modulation circuits.
Deen M. Jamal
Ilowski John
Kovacic Stephen J.
Kung William
Malhi Duljit S.
de Wilton Angela C.
Nortel Networks Limited
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