H - Electricity – 03 – K
Patent
H - Electricity
03
K
H03K 17/687 (2006.01) H03K 17/60 (2006.01)
Patent
CA 2700013
One embodiment is a gate drive circuitry (60) for switching a semiconductor device (62) having a non-isolated input, the gate drive circuitry (60) having a first circuitry (64) configured to turn-on the semiconductor device (62) by imposing a current on a gate of the semiconductor device (62) so as to forward bias an inherent parasitic diode of the semiconductor device (62). There is a second circuitry (66) configured to turn--off the semiconductor device (62) by imposing a current on the gate of the semiconductor device (62) so as to reverse bias the parasitic diode of the semiconductor device (62) wherein the first circuitry (64) and the second circuitry (66) are coupled to the semiconductor device (62) respectively through a first switch and a second switch.
Beupre Richard Alfred
Caiafa Antonio
Glaser John Stanley
Nasadoski Jeffrey Joseph
Sabate Juan Antonio
Company General Electric
Craig Wilson And Company
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