Gate length control for semiconductor chip design

Details Gate length control for semiconductor chip design Gate length control for semiconductor chip design

H - Electricity

01

L

H01L 27/02 (2006.01) H01L 23/482 (2006.01) H01L 27/06 (2006.01) H01L 27/092 (2006.01) H01L 29/423 (2006.01)

Patent

CA 2431162

A semiconductor device includes first and second polysilicon areas on a chip. The first polysilicon area corresponds to circuit elements of the semiconductor device. At least some of the first polysilicon corresponds to polysilicon gates. At least some of the second polysilicon area comprises contacts of the semiconductor device. Metal covers the polysilicon contacts.

L'invention concerne un dispositif semi-conducteur comprenant des première et seconde zones de silicium polycristallin sur une puce. La première zone de silicium polycristallin correspond aux éléments de circuit du dispositif semi-conducteur. Une partie au moins de la première zone de silicium polycristallin correspond à des portes de silicium polycristallin. Au moins une partie de la seconde zone de silicium polycristallin comprend des contacts du dispositif semi-conducteur. Du métal recouvre les contacts de silicium polycristallin.

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