Gate-switching charge-pump implemented inside a phase locked...

Details Gate-switching charge-pump implemented inside a phase locked... Gate-switching charge-pump implemented inside a phase locked...

H - Electricity

03

L

H03L 7/093 (2006.01) H03L 7/089 (2006.01)

Patent

CA 2204476

A charge pump comprising a first branch PMOS FET having a source connected to a voltage source and a drain connected to an output node, a second branch NMOS FET having a drain connected to the output node and a source connected to a ground node, first apparatus for selectively switching a gate of the PMOS FET between its source and a first bias voltage source, and second apparatus for selectively switching a gate of the NMOS FET between its source and a second bias voltage source, the bias voltages being of magnitudes such that the first branch PMOS FET and second branch NMOS FET will source and sink the same magnitude of current when the FETs are fully conducting.

Pompe à charge comprenant une première branche de PMOS TEC comportant une source raccordée à une source de tension et un drain raccordé à un noeud de sortie, une deuxième branche de NMOS TEC comportant un drain raccordé au noeud de sortie et une source raccordée à un noeud installé au sol, le premier dispositif servant à commuter sélectivement une grille de PMOS TEC entre sa source et une première source de tension de polarisation, et un deuxième dispositif servant à commuter sélectivement une grille de NMOS TEC entre sa source et une deuxième source de tension de polarisation, les tensions de polarisation étant de telle valeur que la première branche de PMOS TEC et la deuxième branche de NMOS TEC fourniront et recevront le même courant si les TEC passent complètement en conduction.

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