H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/37
H01L 29/74 (2006.01) H01L 29/423 (2006.01) H01L 29/744 (2006.01)
Patent
CA 1201215
ABSTRACT OF TIE DISCLOSURE The present invention relates to a gate turn-off thyristor having a gate structure capable of a higher interrupting. In accordance with the present invention, a plurality of strip-shaped emitter layers on the cathode side are radially arranged on one main surface of the semi- conductor substrate while forming a plurality of rings. A gate electrode is in ohmic contact with a part of a base layer which surrounds and is adjacent to each of said emitter layers on the cathode side. Between rings formed by said emitter layers on the cathode side, a ring-shaped gate collecting electrode is provided to be connected to said gate electrode. At this time, said gate collecting electrode is provided at such a position as to balance the potential differences produced by gate currents respectively corresponding to inside and outside of said gate collecting electrode.
440851
Horie Akira
Nagano Takahiro
Oikawa Saburo
Yatsuo Tsutomu
Horie Akira
Kirby Eades Gale Baker
Nagano Takahiro
Oikawa Saburo
Yatsuo Tsutomu
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