Gated base controlled thyristor

Details Gated base controlled thyristor Gated base controlled thyristor

H - Electricity

01

L

H01L 29/74 (2006.01) H01L 27/02 (2006.01) H01L 29/10 (2006.01) H01L 29/745 (2006.01) H01L 29/747 (2006.01)

Patent

CA 2085250

2085250 9120096 PCTABS00009 A switching device including four layers (20, 22, 42 and 44) and a gate electrode (32). In its blocking state the switching device operates as a conventional thyristor. The device is turned off by reducing the effective resistance of the upper base region (42) by applying a negative voltage to the gate (32).

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