Gated diode switch

Details Gated diode switch Gated diode switch

H - Electricity

01

L

356/35

H01L 29/86 (2006.01) H01L 29/739 (2006.01) H03K 17/567 (2006.01) H03K 17/94 (2006.01)

Patent

CA 1166359

- 17 - GATED DIODE SWITCH Abstract of the Disclosure A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body, an n+ type cathode region located at the other end, and an n+ type gate region located between the anode and cathode regions. The switch is capable of switching to an "OFF" (blocking) state placing the gate region at the anode voltage. The carrier concentration of the bulk portion of the semiconductor body is 2 x 1012 to 2 x 1013 impurities/cm3. A resistive path may connect anode and cathode regions. Unique control circuitry is disclosed.

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