Ge photodetectors

Details Ge photodetectors Ge photodetectors

H - Electricity

01

L

H01L 31/028 (2006.01) H01L 31/10 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2489567

A photodetector device includes a plurality of Ge epilazers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows the photodetector device to operate efficiently in the C-band and L-band.

Un dispositif photodétecteur comprend une pluralité de couches épitaxiales Ge qui croissent sur un substrat et qui subissent un recuit dans une plage de température définie. Ces couches épitaxiales Ge forment une couche Ge contrainte en traction qui permet à ce dispositif de photodétecteur de fonctionner efficacement dans la bande C et dans la bande L.

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