Generation of fluorine via thermal plasma decomposition of...

C - Chemistry – Metallurgy – 01 – B

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C01B 7/20 (2006.01) B01J 12/00 (2006.01) B01J 19/08 (2006.01) C01B 9/08 (2006.01) C01B 33/107 (2006.01) C01F 7/50 (2006.01) C01F 11/22 (2006.01) C01G 43/06 (2006.01)

Patent

CA 2115576

A compound MFn, where M is a metal and n is the valency of the metal and has a value between 1 and 6, is injected through injection parts (2, 3, 4), and subjected to a thermal plasma (7) at a temperature in excess of 3000 K to dissociate it into the metal and fluorine. Also present in the reactor is an added reactant that will react with the metal or the fluorine to prevent their recombination so that there is formed fluorine gas or a fluoride other than the fluoride of the metal M.

n composé MFn, où M est un métal et n est la valence du métal variant entre 1 et 6, est injecté dans des pièces d'injection (2, 3, 4), et soumis à un plasma thermique (7) à une température supérieure à 3 000 K pour le dissocier de manière à obtenir le métal et le fluore. On trouve également dans le réacteur un réactif ajouté qui réagira avec le métal ou le fluore pour empêcher leur recombinaison de manière à former un gaz fluoré ou un fluorure autre que le fluorure du métal M.

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