Germanium semiconducting radiation detector with phosphorus...

Details Germanium semiconducting radiation detector with phosphorus... Germanium semiconducting radiation detector with phosphorus...

G - Physics

01

T

358/32

G01T 3/08 (2006.01) H01L 31/117 (2006.01)

Patent

CA 1144663

Abstract of the Disclosure Germanium detectors usable for charged particle spectroscopy and capable of enduring overvoltage without impairment are produced by first implanting phosphorus ions in a small dose of high energy and then implanting more phosphorus ions of lower energy in a large dose. The low energy ions reduce surface resistance without impairing the improved properties of with- standing overvoltage that are provided by the high energy implantation. The P+ contact is provided by boron ion implantation in a conventional manner. "Dead zones" on both sides have been found to have a very small thickness of 0.3 µm.

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