Germanium-silicon semiconductor heterostructures

Details Germanium-silicon semiconductor heterostructures Germanium-silicon semiconductor heterostructures

H - Electricity

01

L

356/178

H01L 29/15 (2006.01)

Patent

CA 1301957

- 14 - GERMANIUM-SILICON SEMICONDUCTOR HETEROSTRUCTURES ABSTRACT A semiconductor device comprises a short-period superlattice of alternating monolayers of silicon and germanium grown on a 100 oriented SIGe substrate including 60-95% Ge. The silicon layers are M monolayers thick, where M = 2(2m+1) for m = 0, 1 or 2 (preferably 0) and N = 2(2n+1, n=1,2,3,4,5,6 etc. "Inhomogenous" superlattices in which successive Ge layers have thicknesses N1, N2, N3 etc (selected from the above N values) are disclosed.

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