H - Electricity – 01 – L
Patent
H - Electricity
01
L
6/226
H01L 21/316 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01)
Patent
CA 1277107
GERMANOSILICATE SPIN-ON GLASSES Abstract A process is disclosed for forming a planarized or smooth surface binary glass insulating film comprised of germanium dioxide and silicon dioxide by a spin-on process. The resulting structure has a film thickness uniformity which varies less than 5% over the surface of the wafer. The structure is formed by mixing a predetermined solution of tetraethoxysilane and tetraethoxygermane in a lower alcohol or ketone solvent and catalyzing by the addition of sufficient acid to raise the pH to 1.5 to 2.0 to favor gel formation. The resultant solution is then spun on at an RPM selected to give the desired film thickness for a given solids content of the solution.
512039
Fairchild Semiconductor Corporation
Lehrer William I.
Smart & Biggar
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